基于单根氧化锌纳米线的场效应管的光电特性研究  

Photoelectric Characteristics of Single ZnO Nanowire Field Effect Transistor

作　　者：李静雷[1] 郑凯波[1] 沈浩■ 邢晓艳[1] 孙大林[1] 陈国荣[1] 

机构地区：[1]复旦大学材料科学系,上海200433

出　　处：《真空科学与技术学报》2008年第1期83-86,共4页Chinese Journal of Vacuum Science and Technology

基　　金：国家自然科学基金(No.60471010);上海市科学技术基金项目(No.0552nm038)

摘　　要：本文介绍了一种基于单根氧化锌纳米线场效应管的制备方法,用XRD和SEM分析了样品的结构和形貌,测试了它的输出特性曲线和转移特性曲线。当Vds=2 V时,测得场效应管的开启电压Vgt=-16.2 V;计算得到低频跨导gm=46.6nS。在Vgs=0 V时,测得一维ZnO纳米线的载流子浓度n=1.15×108cm-1,电子迁移率μe=14.4 cm2/Vs,电导率σ=0.26Ω-1cm-1。该场效应管的上限截止频率fH=1585 Hz,漏源极间电容C=25.4 pF。本文还对基于单根氧化锌纳米线的场效应管的光电灵敏度和光电时间响应进行了测试分析。This text introduced a method of ZnO nanowire field effect transistor（FET） fabrication. Scanning electron microscopy（SEM） and X-ray diffraction（XRD） were used to characterize the morphology and microstructures of the asobtained sample. The output and transfer characteristics were tested respectively. The slope of output characteristic was 2.53×10^-7 A/V when Vgs was 0 V.The turn-on voltage was - 16.2 V and the transconductance was 46.6 nS when Vds was 2 V. The carrier concentration of one-dimensional ZnO nanowire was 1.15×10^8 cm^-1, the electronic mobility was 14.4 cm^2/Vs and the conductivity was 0.26 Ω^-1cm^-1. The cut-off frequency was 1585 Hz;the capacitance between the drain electrode and the source electrode was 25.4 pF. We also analysised the photoelectricity sensitivity and the time response of the FET and explained the possible mechanism.

关 键 词：氧化锌 纳米线 场效应管 频率响应 

分 类 号：TN304.21[电子电信—物理电子学] O475[理学—半导体物理]