低温多晶硅薄膜的制备工艺研究  

Research on preparation processes of low-temperature poly-silicon films

作　　者：杨定宇[1] 蒋孟衡[1] 杨军[1] 

机构地区：[1]成都信息工程学院光电技术系,四川成都610225

出　　处：《真空》2008年第1期41-44,共4页Vacuum

基　　金：四川省应用基础研究基金资助项目(04JY029-104)

摘　　要：低温多晶硅薄膜是制备高性能薄膜晶体管的首选材料,由其制成的薄膜晶体管由于在平板显示器件驱动中所展现的优越性能而受到广泛关注。本文系统介绍了低温多晶硅薄膜的三种制备方法—金属诱导横向晶化法、准分子激光晶化法和电感耦合等离子体化学气相沉积法的原理和研究进展,比较了它们之间各自的优缺点,最后对该领域的发展前景进行了展望。The low-temperature polycrystalline silicon thin films （LTPS）, as the first choice for the fabrication of thin film transistor （TFT）, have attracted more and more attention recently because of its excellent performance for flat panel display. Describes systematically the working principle and R＆D of the three preparation processes of LTPS, ie., the metal-induced lateral crystallization （MILC）, excimer laser annealing （ELA） and inductively coupled plasma CVD （ICP-CVD）, with their advantages and disadvantages compared with each other. An outlook for the three processes is made in respect to their applications and developments in LTPS-TFT.

关 键 词：低温多晶硅薄膜 金属诱导横向晶化 准分子激光晶化 电感耦合等离子体化学气相沉积 

分 类 号：TN304[电子电信—物理电子学]