MOCVD制备PbTiO_3铁电薄膜的研究  

Characterization of PbTiO 3 Thin Films by Metalorganic Chemical Vapor Depositoin

作　　者：陈延峰[1,2,3] 孙力[1,2,3] 于涛[1,2,3] 闵乃本[1,2,3] 姜晓明[1,2,3] 修立松 

机构地区：[1]南京大学固体微结构物理实验室 [2]南京大学材料科学与工程系 [3]中科院高能物理研究所同步辐射实验室

出　　处：《电子显微学报》1997年第4期433-436,共4页Journal of Chinese Electron Microscopy Society

摘　　要：由于在动态随机存储器、传感器和探测器等器件中的应用，使铁电薄膜的制备成为研究热点。本文报道了利用低压ＭＯＣＶＤ工艺分别在（００１）取向ＳｒＴｉＯ３和重掺杂硅单晶衬底上制备ＰｂＴｉＯ３铁电薄膜的工作。通过Ｘ射线衍射、ＡＦＭ和Ｒａｍａｎ光谱对薄膜的微结构进行分析，在ＳｒＴｉＯ３衬底上获得了单畴、多畴等几种畴结构组态，从实验上证实了铁电薄膜中畴的形成与薄膜的厚度有关；得到了铁电薄膜邻位面台阶生长的实验证据；对薄膜的晶格畸变，晶格振动及自发极化的测量发现，ＰｂＴｉＯ３薄膜具有明显的“铁电弱化”现象。对上述现象。PbTiO 3 thin films were prepared by metalorganic chemical vapor deposition (MOCVD). The morphology of the surface of these films by scanning electron microscopy, optical microscopy and atomic force microscopy showed that the films were grown by a way of layer by bayer on the vicinal plane of the substrate, meanwhile the films grown on the singular plane of substrate suffered the Stranski Krastonow like transition by the formation of tetragonal crystals in order to release the elastic energy due to the lattice misfit between PbTiO 3 SrTiO 3. Measured by synchrotron radiation x ray rocking curve, the microstructures of single domain for 300nm thickness films and multidomain for 450nm thickness films were established, indicating that there is a critical thickness for the formation of multidomain. Some evidence of ferroelectric weakening were observed by Raman spectrum, X ray diffraction analysis and P E hysteresis measurement.

关 键 词：铁电薄膜 铁电体 MOCVD 

分 类 号：TN304.9[电子电信—物理电子学] TM221.06[一般工业技术—材料科学与工程]