低温分子束外延GaAs薄膜的带边二次电光效应和光折变效应  

Band Edge Quadratic Electro-Optical Effect and Photorefractive Effect of Low Temperature-Growth MBE GaAs

作　　者：周凯明 李江[1] 李乙钢[1] 郭儒[1] 张光寅[1] 潘士宏[1] 李瑞钢[2] 朱战平[2] 梁基本[2] 

机构地区：[1]南开大学物理系,天津300071 [2]中国科学院半导体研究所,北京100083

出　　处：《Journal of Semiconductors》1997年第9期654-659,共6页半导体学报（英文版）

基　　金：国家自然科学基金

摘　　要：本文研究了低温生长分子束外延GaAs薄膜的光电子性质．我们测量了它的I-V特性；用电调制透射谱测量了电吸收和电折变，并由此分析了它的带边共振吸收平方电光效应；用二波混合的方法测量了它的光折变性质．对两种方法得到的电吸收和电折变作了分析比较．The photo-electronic properties of a low temperature-growth molecular beam epitaxy GaAs film have been studied. We have measured the I-V characteristic, electroabsorption and electrorefraction by use of electrotransmittance, and analyzed the band edge quadratic electro-optical effect. We have also measured the photorefractive properties by two waves mixing. The results obtained from the two methods have been compared and discussed.

关 键 词：砷化镓 分子束外延生长 二次电光效应 

分 类 号：TN304.23[电子电信—物理电子学]