高k材料用作纳米级MOS晶体管栅介质薄层(下)  

High-k Replacement of Ultrathin Gate Dielectrics for Nanoscale MOS Transistors(Ⅱ)

作　　者：翁妍[1] 汪辉[1] 

机构地区：[1]上海交通大学微电子学院,上海200030

出　　处：《半导体技术》2008年第2期93-97,共5页Semiconductor Technology

基　　金：国家自然科学基金(NSFC60606015);上海市浦江人才计划资助项目(05PJ14068)

摘　　要：随着45 nm及32 nm技术节点的来临,高介电常数(high-k)材料成为代替SiO2作为栅介质薄层材料的较好选择,但是大多数高k材料是离子金属氧化物,其基本物理性能和材料特性不仅导致了很多不可靠因素,还会造成电学性能的损失。简述了高k材料的一些电学性能以及频率变化的电荷泵技术在高k栅介质薄层探测到的缺陷深度,总结了高k材料的基本限制及主要问题,并且介绍了未来技术节点的可能解决方案。With the coming of 45 nm and 32 nm technology, high- k materials could be good alternatives of SiO2 gate dielectric. But most of the high-k materials are ionic metal oxides. The fundamental physics and material properties cause several undesirable reliability problems as well as the degradation of electrical performance. The relationships between some electrical characteristics, such as leakage current, mobility and its physics and material properties are discussed. The detection of the defects in high-k dielectrics by frequency dependent charge pumping technology is introduced. The main drawbacks and fundamental limitations of high-k gate dielectric are reviewed and the possible solutions are listed.

关 键 词：栅介质薄层 高介电常数 电学结果 

分 类 号：TN304[电子电信—物理电子学] TN386.1