用XPS法研究SiO_2/4H-SiC界面的组成  

Study of SiO_2/4H-SiC Interface Composition by XPS

作　　者：赵亮[1] 王德君[1] 马继开[1] 陈素华[1] 王海波[1] 

机构地区：[1]大连理工大学电子系,辽宁大连116023

出　　处：《半导体技术》2008年第2期121-125,共5页Semiconductor Technology

基　　金：国家"973"资助项目(2005CCA00100)

摘　　要：利用X射线光电子谱（XPS）研究了高温氧化形成的Si02／4H．SiC界面的化学组成。获取低浓度HF酸刻蚀速度基础上制备出超薄氧化膜（1～1．5nm）样品，并借助标准物对照法辅助谱峰分析。结果表明，高温氧化Si02／4H．SiC界面，类石墨碳较多，除Si^＋成分外，还存在Si^2＋和Si^3＋两种低值氧化物。三种工艺处理后界面成分含量的对比，指出界面成分可通过合理工艺有效控制，以C-V测试曲线印证了界面成分减少对电学特性的改善。The composition of SiO2/4H-SiC prepared by high temperature oxidizing through XPS was investigated, The ultra thin oxidation sample （1 - 1.5 nm） was prepared by controlling the time of dilute HF acid etching SiO2 grown on SiC, and the standard samples were adopted to assist the analysis. Results indicate that the SiO2/4H-SiC interface receives more graphite-like carbon at high temperature oxidizing, and two low values oxide Si^2 ＋ and Si^3 ＋ are found besides Si^1 ＋ . The Si 2p spectrums comparison of three samples processed by different techniques respectively suggests that interfacial component quantum is controllable through improve reasonable methods, and the C- V curve shows that the reduction of interfacial component quantum can the electrical characteristic.

关 键 词：二氧化硅/碳化硅 4H-碳化硅 X射线光电子谱 超薄氧化膜 

分 类 号：TN304[电子电信—物理电子学]