InP基谐振隧穿二极管的研究  

Study of InP-Based Resonant Tunneling Diode

作　　者：李亚丽[1] 张雄文[1] 冯震[1] 周瑞[1] 张志国[1] 

机构地区：[1]中国电子科技集团公司第十三研究所,专用集成电路国家级重点实验室,石家庄050051

出　　处：《半导体技术》2008年第2期141-143,共3页Semiconductor Technology

基　　金：国家自然科学基金(NSFC60606015);上海市浦江人才计划项目(05PJ14068)

摘　　要：谐振隧穿二极管(RTD)具有高频、低功耗、负阻、双稳态、自锁等优点,在超高速数字电路领域具有非常好的应用前景。加之InP材料固有的优越特性,使得InP基谐振隧穿器件成为目前研究的重点。研究并试制了InP基RTD实验样品,对其直流特性进行了测试分析,器件的最大电流峰谷比(PVCR)达到了17.8。With high device frequency, low power dissipation, negative impedance, bistable and self- locking, resonant tunneling diode （RTD） has a promising application prospect in the ultra high speed digital circuits. Because of the inherent advantages InP-based resonant tunneling devices attract great attention in recent years. InP-based RTD was fabricated, its DC characteristics were investigated, and results show that the maximum peak-to-valley current ratio （PVCR） is 17.8 at room temperature.

关 键 词：谐振隧穿二极管 电流峰谷比 铟磷基外延材料 

分 类 号：TN312.2[电子电信—物理电子学]