PECVD氮化硅薄膜内应力试验研究  

Experimental Study of the Internal Stress of Silicon Nitride Films Deposited by PECVD

作　　者：杨景超[1] 赵钢[1] 邬玉亭[1] 许晓慧[1] 

机构地区：[1]中国科学技术大学精密机械与精密仪器系,安徽合肥230027

出　　处：《新技术新工艺》2008年第1期77-80,共4页New Technology & New Process

摘　　要：研究了等离子体增强化学气相沉积氮化硅薄膜的内应力。通过改变沉积工艺参数,研究了射频功率、反应气体流量比、载气体分压比和反应压强对氮化硅薄膜的内应力的影响,并且分析了氮化硅薄膜内应力的形成机制。制备出了应力只有-182.4MPa的低应力氮化硅薄膜。The Internal Stress on silicon nitride thin films that were fabricated by PECVD are studied in this paper.A serial of detailed experiments are carried out,which mainly studied how the processing parameters-RF power,flow ratio of SiH4 and NH3,flux of dilution gas and pressure-influence the internal stress of silicon nitride films.And the contributions of processing parameters on the stress of silicon nitride films are analyzed.Finally,the low stress of silicon nitride thin films with-182.4Mpa are fabricated by PECVD.

关 键 词：氮化硅薄膜 内应力 PECVD 

分 类 号：TB43[一般工业技术]