考虑速度过冲效应的HEMT物理模型  

A Physical Model Including the Velocity Overshoot Effect of HEMTs

作　　者：黄艺[1] 沈楚玉[1] 

机构地区：[1]东南大学毫米波国家重点实验室,南京210096

出　　处：《微波学报》1997年第3期188-194,187,共8页Journal of Microwaves

摘　　要：本文提出一种考虑速度过冲效应的HEMT器件静态和小信号解析物理模型。通过对栅极下面沟道中靠近源端附近的电场采用弱强阶梯场近似，提出了一个半经验的速度过冲模型，在非线性电荷控制模型的基础上，导出了基于物理参数的HEMT器件电流一电压特性和小信号等效电路参数的解析表达式。实际计算结果与测得数据比较表明，本模型具有比较高的精度。A novel physical model of static and small-signal analysis including the velocity overshoot effect of HEMT devices is presented. A semi-empirical velocity overshoot model is developed with the step field approximation for the electrical field near the source end of the channel. Based on a more accurate nonlinear charge-controlled relationship, the analytical expressions of the current-voltage characteristics and the small-signal equivalent circuit parameters for HEMT devices lncluding the velocity overshoot effect have been derived. The calculated results compared with the measured data show that this model is very suitable for CAD applications withhigher accuracy .

关 键 词：速度过冲 HMET 微波 半导体器件 

分 类 号：TN385[电子电信—物理电子学]