LP-MOVPE生长的低阈值1.3μm InGaAsP/InP压、张应变交替MQW激光器特性  

LOW THRESHOLD 1. 3μm INGaAsP/InP TENSILE AND COMPRESSIVELY STRAINED MQW LASERS GROWN BY LP-MOCVD

作　　者：王志杰[1,2] 陈博[1,2] 王圩[1,2] 张济志[1,2] 朱洪亮[1,2] 周帆[1,2] 王玉田[1,2] 金才政[1,2] 马朝华[1,2] 

机构地区：[1]国家光电子工艺中心 [2]中国科学院半导体研究所,北京100083

出　　处：《光子学报》1997年第5期418-421,共4页Acta Photonica Sinica

摘　　要：本文国内首次报道了LP－MOVPE法生长高质量的压、张应变交替InGaAsP多量子阱结构的研制过程及其材料的高精度X－ray双晶摇摆衍射曲线和荧光光谱特性表征．在此材料基础之上制作的宽接触激光器阈值电流密度小于300A／cm2（腔长800μm），平面掩埋条形结构激光器平面掩埋异质结（PBH）条形结构多量子阱激光器阈值电流13～15mA.经过双腔面镀增透射膜后，其TE模与TM模自发发射谱光强差为3dBm，呈现偏振补偿特性．High quality 1.3 μm InGaAsP/InP gain medium with tensile and compressive strained multi-quantum wells grown by Low Pressure Metalorganic Chemical Vapor Deposition(LP-MOCVD)was reported. The broad area threshold current density was less than 300A/cm2 with 800μm cavity length. The threshold current of Planer Buried Heterostructure (PBH) MQW laser was 13~ 15mA. The anti-reflection film coated PBH laser based on this structure was found to have the difference of transverse electric(TE) and transverse magnetic(TM) sp0ntaneous emission power only 3dB, it indicated approximately equal gain in both TE and TM modes.

关 键 词：低阈值 激光器 MOCVD 铟镓砷 MQW 

分 类 号：TN248[电子电信—物理电子学]