氧化锌薄膜生长与ZnO基薄膜晶体管制备(英文)  

ZnO Film Growth and the Fabrication of ZnO-Based Thin Film Transistors

作　　者：马仙梅[1] 杨小天[1] 朱慧超[2] 王超[3] 高文涛[1] 金虎[1] 齐晓薇[1] 高博[1] 付国柱[1] 荆海[1] 马凯[1] 常遇春[2] 杜国同[2] 

机构地区：[1]长春光学精密机械与物理研究所 [2]吉林大学 [3]吉林建筑工程学院

出　　处：《电子器件》2008年第1期115-116,共2页Chinese Journal of Electron Devices

基　　金：NCET(No.05-0326,NSFC (No.60576054,60576043,60576056);Jilin Univresity In-novation Foundation;project of Chang chun science and technology plans with contract number of 2006303;projects of Ministry of Construction;China and Department of Education of Jilin province

摘　　要：通过金属有机化学气相沉积(MOCVD)方法生长ZnO薄膜。XRD测试显示出(002)晶面的强衍射峰,表明生长的ZnO薄膜是主度的c轴取向。基于ZnO薄膜基础,我们制备了ZnO基薄膜晶体管。The ZnO films were deposited on the substrate of glass by MOCVD. The X-ray diffraction patterns of samples show sharp diffraction peaks ZnO（0 0 2）,indicating that the films were highly c-axis oriented. Based on the ZnO film,we fabricated ZnO thin film transistor（ZnO-TFT）.

关 键 词：氧化锌 薄膜晶体管 MOCVD 

分 类 号：TN304.055[电子电信—物理电子学] TN335