氧化锌基薄膜晶体管制备与研究  

The Fabrication and Study of ZnO-Based Thin Film Transistors

作　　者：杨小天[1] 马仙梅 朱慧超[3] 高文涛 金虎 齐晓薇 高博 董秀茹 付国柱 荆海 王超[1] 常遇春[3] 杜国同[3] 曹健林 

机构地区：[1]吉林建筑工程学院 [2]长春光学精密机械与物理研究所 [3]吉林大学

出　　处：《电子器件》2008年第1期121-123,共3页Chinese Journal of Electron Devices

基　　金：This work was supported by NCET(No.050326,NSFC(No.60576054,60576043,60576056);Jilin Univresity Innovation Foundation;project of Chang chun science and technology plans with contract number of 2006303;projects of Ministry of Construction China and Department of Education of Jilin province.

摘　　要：以玻璃为衬底,利用金属有机化学气相沉积( MOCVD)方法,在360℃附近实现ZnO薄膜的生长。利用ZnO为有源层制备底栅型薄膜晶体管。SiO2被用作栅绝缘材料以有效的抑制漏泄电流的产生,达到氧化锌薄膜晶体管(ZnO-TFT)成功运作目的。ZnO-TFT的电流开关(on/off)比达到104以上。ZnO-TFT在可见光区平均光透过率大约为80 %。以上表明利用ZnO替代传统Si材料作有源层材料制备透明薄膜晶体管是可能的。Bottom-gate-type thin film transistors using ZnO as an active channel layer （ZnO-TF-TS） have been constructed. The ZnO layers were deposited using metal organic chemical vapor deposition（MOCVD） at about 360℃. SiO2 was used as the material of gate insulator to suppress the leakage current effectively and to enable the ZnO-TFT to operate successfully. The drain current on-to-off ratio of ZnO-TFTs fabricated on the substrate of glass is about 104. The average optical transmission of ZnO-TFTs in the visible portion is -80%. All above shows that it is possible to fabricate a transparent TFT using ZnO as an active channel layer instead of the traditional Si material.

关 键 词：氧化锌 透明 薄膜晶体管 MOCVD 

分 类 号：TN321.5[电子电信—物理电子学]