平板电极间鞘层离子刻蚀速率计算  

Etching Rate Calculation of Ion in the Sheath between Planar Electrodes

作　　者：尹盛[1] 王飞[1] 李战春[2] 王敬义[1] 

机构地区：[1]华中科技大学电子科学与技术系,湖北武汉430074 [2]华中科技大学网络与计算中心,湖北武汉430074

出　　处：《中国材料科技与设备》2007年第6期56-59,共4页Chinese Materials Science Technology & Equipment

基　　金：国家自然科学基金资助项目（10475029）

摘　　要：利用所建立的鞘层区离子速度分布函数，得出了鞘层区离子平均能量、平均速度、和通量以及高能中性粒子通量和能量通量等数学模型。计算了包括离子和高能中性粒子的刻蚀速率，结果表明与实验数据吻合。各模型都以工艺参数：压力、温度、放电电压以及反应室尺寸等参数表示，为工艺优化提供了理论依据。Using velocity distribution function of ion in sheath established in the paper , the average values of energy , velocity ,and flux of energy for ions ,and the energy flux and particle flux for energetic Ar atoms were gotten. The etching rate ineluded Ar^＋ and energetic Ar are calculated which show that the calculation results are approximately identical with the test data . All of the parameters in the models are magraphie technologic such as pressure ,temperature ,cathode voltage and camber geometry which the foundations could be provided for the optimal technology.

关 键 词：等离子体鞘层 分布函数 平均参数 刻蚀速率 

分 类 号：TN304[电子电信—物理电子学]