多孔硅电学特性研究  

Investigation of the Electrical Properties of Porous Silicon

作　　者：房振乾[1] 胡明[1] 刘博[1] 宋阳[1] 

机构地区：[1]天津大学电子信息工程学院,天津300072

出　　处：《材料工程》2008年第2期9-13,17,共6页Journal of Materials Engineering

基　　金：国家自然科学基金资助项目(6037103060771019)

摘　　要：采用双槽电化学腐蚀法制备多孔硅材料,形成了Pt/多孔硅/P+型单晶硅/多孔硅/Pt的样品微结构。主要研究了腐蚀条件及氧化后处理对这一微结构横向I-V特性的影响。结果表明该微结构横向I-V特性主要由多孔硅层的电学特性所决定,呈现出非整流的欧姆接触特性。Porous silicon （PS） was prepared in a double-tank cell by using the electrochemical corrosion method and the samples with a Pt/PS/P^＋-Si/PS/Pt microstructure were obtained. The effects of the etching conditions and post-oxidation process of PS on the transverse I-V characteristics of this kind of microstructure were thoroughly investigated. It was shown＇that the transverse I-V characteristics of this kind of microstructure were mainly decided by the electrical properties of PS underlayer, which had nonrectifying properties of ohmic contacts.

关 键 词：多孔硅 双槽电化学腐蚀法 I-V特性 欧姆接触 

分 类 号：O472[理学—半导体物理] O478[理学—物理]