GaN纳米棒的催化合成及其发光特性(英文)  

Catalytic Synthesis and Luminescent Characteristics of GaN Nanorods

作　　者：陈金华[1] 薛成山[1] 庄惠照[1] 李红[1] 秦丽霞[1] 杨兆柱[1] 

机构地区：[1]山东师范大学半导体研究所,济南250014

出　　处：《物理化学学报》2008年第2期355-358,共4页Acta Physico-Chimica Sinica

基　　金：国家自然科学基金(90201025,90301002)资助项目

摘　　要：使用稀土元素Tb作催化剂,通过氨化溅射在Si(111)衬底上的Ga2O3/Tb薄膜,成功制备出GaN纳米棒.X射线衍射测试显示,GaN纳米棒具有六方结构.利用扫描电子显微镜和高分辨透射电子显微镜观察分析得出,纳米棒为单晶GaN,纳米棒的直径为50-150nm,长度约10μm.光致发光谱在368.6nm处有一强的紫外发光峰,说明纳米棒具有良好的发光特性.讨论了GaN纳米棒的生长机制.Rare earth metal seed Tb was employed for the growth of GaN nanorods. GaN nanorods were synthesized successfully through ammoniating Ga2O3/Tb films sputtered on Si（111） substrates. X-ray diffraction results indicated that the nanorods were hexagonal GaN. Observations using scanning electron microscopy and high-resolution transmission electron microscopy showed that GaN was of single-crystal nanorod structure, with diameter 50-150 nm and length about 10 μm. Photoluminescence spectrum showed a strong UV emission peak at 368.6 nm, indicating that the products possess good luminescent characteristics. The growth mechanism of GaN nanorods was also discussed.

关 键 词：GAN 纳米棒 单晶 发光 

分 类 号：O643.36[理学—物理化学]