一种基于光子晶体结构的新型MEMS红外光源  

Novel MEMS Infrared Radiation Source Based on Photonic Crystal Structure

作　　者：王国勋[1] 纪新明[1] 周嘉[1] 包宗明[1] 鲍敏杭[1] 黄宜平[1] 

机构地区：[1]复旦大学专用集成电路与系统国家重点实验室,上海200433

出　　处：《纳米技术与精密工程》2007年第4期266-268,共3页Nanotechnology and Precision Engineering

基　　金：国家自然科学基金资助项目(90607015)

摘　　要：结合光子晶体和表面等离子体共轭(surface plasmon resonance,SPR)技术,研究了一种新型的MEMS红外光源.相比传统的红外光源,该新型光源具有红外光谱窄、红外发射峰位置可调等优点.该光源衬底材料为硅,然后在硅表面形成SiO2-Cr-Au结构,并在Si-SiO2-Cr-Au结构表面形成刻蚀深度为2μm、孔间距分别为7μm和8μm(孔直径分别为3.5μm和4μm)等不同的周期性排列圆孔的光子晶体结构.采用有限元时域分析(finite-difference time-domain,FDTD)软件模拟和傅里叶红外光谱仪实际测量的结果表明,该新型MEMS红外光源具有窄的波峰,其反射光谱波谷波长和圆孔间距相近.通过理论推导和FDTD软件模拟,研究了光源光子晶体结构中圆孔深度和透射光谱波峰强度关系.结果表明,圆孔深度为2μm的结构比3μm结构的透射强度更强.透射强度与圆孔深度h在一定范围近似为倒数平方关系,即在一定范围内圆孔越深,透射越弱.Based on photonic crystal and surface plasmon resonance（SPR） technology, a novel tunable MEMS infrared radiation （IR） source was studied and fabricated. Compared with conventional infrared radiation source, the infrared spectrum of the novel infrared radiation source is narrow and tunable. Its substrate is Si, and SiO2-Cr-Au structure is formed on Si surface. Then 2 μm-depth periodic holes array is etched on Si-SiO2- Cr-Au structure whose distances between the holes with diameters of 3.5 μm and 4 μm are 7 μm and 8 μm respectively. By theoretical calculation, simulation with finite-difference time-domain （FDTD） software and measurement using FTIR （Magna 550）, the results show that the novel MEMS infrared radiation source is of narrow peak, and reflection peak wavelength is close to the distance between the holes. Furthermore, transmission strength is inverse to the hole depth in a certain scope, it is found that the deeper the depth of the hole, the weaker the SPR effect within certain range.

关 键 词：表面等离子体共振 微机电系统 红外光源 波峰强度 反射率 

分 类 号：TN21[电子电信—物理电子学]