p-Si TFT栅绝缘层用SiNx薄膜界面特性的研究  

Interface Properties of Silicon Nitride Thin Films as Gate Insulator Layer for p-Si Thin Film Transistor

作　　者：张化福[1] 袁玉珍[1] 臧永丽[1] 祁康成[2] 

机构地区：[1]山东理工大学物理与光电信息技术学院,山东淄博255049 [2]电子科技大学光电信息学院,四川成都610054

出　　处：《液晶与显示》2008年第1期35-38,共4页Chinese Journal of Liquid Crystals and Displays

基　　金：电子科技大学-浙江阳光集团联合OLED器件研发项目(No.W050317)

摘　　要：以NH3和SiH4为反应源气体,在低温下采用射频等离子体增强化学气相沉积(RF-PECVD)法在多晶硅(p-Si)衬底上沉积了SiNx薄膜。系统地分析讨论了沉积温度、射频功率、反应源气体流量比对SiNx薄膜界面特性的影响。分析表明,沉积温度和射频功率主要是通过影响SiNx薄膜中的Si/N比和H含量影响薄膜的界面特性,而NH3/SiH4流量比则主要通过影响薄膜中的H含量影响薄膜界面特性。实验制备的SiNx薄膜层中的固定电荷密度、可动离子密度、SiNx与p-Si之间的界面态密度分别达到了1.7×1012/cm2、1.4×1012/cm2、3.5×1012/(eV.cm2),其界面特性达到了制备高质量p-SiTFT栅绝缘层的性能要求。Radio frequency plasma-enhanced chemical-vapor deposited silicon nitride thin films on p-Si wafers have been prepared by the reaction of NH3 and SiH4. The influences of deposition temperature, RF power and NH3/SiH4 ratio on interface properties have been systematically discussed. It is found that deposition temperature and RF power influence interface properties of silicon nitride thin films by affecting the Si/N ratios and H content, while NH3/SiH4 ratio takes effect by mainly affecting H content. The fixation charge density of SiNx thin films is about 1.7×10^12/cm^2 , the mobile ion density is about 1.4×10^12/cm^2 , the interface state density between SiNx thin films and p-Si is about 3.5×10^12 / eV·cm^2, the interface properties of the SiNx films have attained the requirement as gate insulator layer for p-Si thin film transistor.

关 键 词：TFT SiNx薄膜 界面特性 

分 类 号：O484.4[理学—固体物理]