实际应用条件下Power MOSFET开关特性研究(下)  

Research on the Switching Property of Power Mosfet under Practical Application Conditions(Ⅱ)

作　　者：方波[1] 张元敏[1] 崔卫群[2] 

机构地区：[1]许昌学院电信学院,河南许昌461000 [2]信息工程大学,河南郑州450001

出　　处：《现代电子技术》2008年第5期145-148,151,共5页Modern Electronics Technique

基　　金：河南省科技攻关计划项目(072102240033)

摘　　要：从功率MOSFET内部结构和极间电容的电压依赖关系出发,对功率MOSFET的开关现象及其原因进行了较深入分析。从实际应用的角度,对功率MOSFET开关过程的功率损耗和所需驱动功率进行了研究,提出了有关参数的计算方法,并对多种因素对开关特性的影响效果进行了实验研究,所得出的结论对于功率MOSFET的正确运用和设计合理的MOSFET驱动电路具有指导意义。Starting from the internal cell structure of power MOSFET and the inter- junction parametric capacitances, the Switching phenomenon of Power MOSFET and its cause of formation are analyzed in depth. The switching power loss and driving power are studied as viewed from practical applications. The calculation methods for relative parameters are proposed and various kinds of factors which make impacts on switching processes are studied by experiments. The conclusions are significant for proper usage of power MOSFET and design of driving circuit.

关 键 词：功率MOSFET 开关现象 开关特性 密勒效应 开关损耗 

分 类 号：TN386[电子电信—物理电子学]