开管镓扩散技术改善快速晶闸管通态特性  

Improvement on the On-state Characteristics of Fast Thyristor by Using Open-tube Ga-diffusion

作　　者：裴素华[1] 薛成山[1] 赵善麒[2] 

机构地区：[1]山东师范大学半导体研究所,济南250014 [2]北京电力电子新技术研究开发中心,100088

出　　处：《固体电子学研究与进展》1997年第3期268-271,共4页Research & Progress of SSE

摘　　要：对提高快速晶闸管发射区ne与基区Pb杂质浓度比值Ne／Nb，降低器件通态压降进行了理论分析；叙述了开管Ga扩散技术的特点，并与闭管Ga扩散和B－A1双质P到扩散方式进行了比较。实验证明，用开管Ga扩散工艺制造快速晶闸管，可明显改善器件的通态伏安特性。The decreasing of on-state voltage of high speed thyristor with raising of the ratio of emitter-region impurity concentration N. to base-region impurityconcentration Nb is theoretically analysed in this paper. The features of the opentube Ga-diffusion technology are described and compared with the close-tube Gadiffusion and B-Al diffusion. Experiment shows that the open-tube Ga-diffusiontechnology can improve the on-state characteristics of high-speed thyristor.

关 键 词：晶闸管 开管 镓扩散 快速晶闸管 通态特性 

分 类 号：TN342[电子电信—物理电子学] TN305.4