粉尘等离子体的研究  

Study on Particulate Plasma

作　　者：尹盛[1] 赵亮[1] 李战春[2] 王敬义[1] 

机构地区：[1]华中科技大学电子科学与技术系,湖北武汉430074 [2]华中科技大学网络与计算中心,湖北武汉430074

出　　处：《中国材料科技与设备》2008年第1期37-39,共3页Chinese Materials Science Technology & Equipment

基　　金：国家自然科学基金资助项目（10475029）

摘　　要：在实验和理论上研究了粉粒在等离子体鞘区的沉降、带电、收集和刻蚀。基于粉尘对等离子区电子能量分布函数的影响，讨论了粉尘对等离子体的干扰。有关结果表明等离子体对硅粉的纯化处理有可能应用于将工业硅直接制成太阳级硅。The drop, charges, collecting and etching of the particulate were studied in the fields of test and theory. Based on the influence of the particulates on electron energy distribution function in the plasma area, the disturbed effects of plasma due to particulates were discussed. The results show that the plasma treatment for Si-powder purity could be used in the SOG-Si manufacture from industry silicon directly.

关 键 词：硅粉纯化 等离子体稳定性 刻蚀速率 太阳级硅 

分 类 号：TN304[电子电信—物理电子学]