高纯锗中浅受主的光热电离光谱  

Photo-thermal ionization spectroscopy of shallow acceptors in high purity germanium

作　　者：余晨辉[1,2] 张波[1] 余丽波[2] 李亚军[1] 陆卫[1] 沈学础[1] 

机构地区：[1]中国科学院上海技术物理研究所,红外物理国家重点实验室,上海200083 [2]西南技术物理研究所,光电器件部,成都610041

出　　处：《物理学报》2008年第2期1097-1101,共5页Acta Physica Sinica

基　　金：国家自然科学基金(批准号:10474107);上海市基础研究重大项目(批准号:06dj14008)资助的课题.~~

摘　　要：在液氦温度附近,运用傅里叶变换光谱以及与之相连的磁光光谱系统,对室温电阻率约为50Ω·cm的p型高纯锗样品进行了高灵敏度的光热电离光谱的研究.从实验上确定了高纯锗样品中浅杂质光热电离的最佳温度范围,在该温度范围内测量了样品的光热电离光谱,指出该样品中主要杂质为浅受主硼与铝.对杂质谱线发生分裂的两种原因,补偿性杂质导致的快速复合以及随机应力等,进行了分析讨论.The results of high sensitivity photo-thermal ionization speetroseoie （PTIS） investigation of shallow aeeeptors in high purity p-type germanium sample with room temperature resistivity of about 50Ω·cm, at temperature above liquid helium by Fourier transform spectrometer and associated magneto-optical measurement systems, are reported. The optimum photo-thermal ionization temperature range for the shallow impurities in high purity germanium is determined experimentally. At temperatures within this range, the PTIS spectra of this sample were measured. Boron and aluminum are found to be the main shallow acceptors in the sample. The causes of line splits of spectra, rapid recombination of compensating impurity and random strain, are analyzed and discussed.

关 键 词：高纯锗 光热电离光谱 元素半导体中的杂质和缺陷能级 

分 类 号：O472[理学—半导体物理]