高纯硅中补偿性杂质的光热电离光谱  

Compensating impurity in high purity silicon single crystal investigated by photo-thermal ionization spectroscopy

作　　者：余晨辉[1,2] 张波[1] 余丽波[2] 李亚军[1] 陆卫[1] 沈学础[1] 

机构地区：[1]中国科学院上海技术物理研究所,红外物理国家重点实验室,上海200083 [2]西南技术物理研究所,光电器件部,成都610041

出　　处：《物理学报》2008年第2期1102-1108,共7页Acta Physica Sinica

基　　金：国家自然科学基金(批准号:10474107);上海市基础研究重大项目(批准号:06dj14008)资助的课题.~~

摘　　要：首先测量了高纯n型硅样品在接近液氦温度区域内随温度变化的光热电离光谱,确定了硅样品的最佳光热电离温度范围.在该温度范围内,在有本征带隙光照射条件下,测量了样品的高分辨率光热电离光谱,同时观察到了来自主要浅杂质施主磷以及补偿性杂质硼的正信号.随后,应用外加磁场,对硼的光热电离光谱进行了研究,发现来自硼的光热电离信号,在外加磁场作用下,发生了由正向负信号的转变.通过对该现象进行分析讨论,排除了该现象是温度效应的可能,指出普遍用来解释补偿性杂质光热电离响应的Darken模型存在不足,而少数载流子快速复合模型能正确解释外加磁场作用后产生的现象,得到了实验的支持.The optimum photo-thermal ionization range near liquid helium temperature for the shallow impurities in n type high purity silicon single crystal was determined experimentally. At temperature within this range, the high resolution photo-thermal ionization spectra （PTIS） of this sample were measured. Positive PTIS responses from the majority residual impurity phosphor （P） and compensating impurity boron （B） were observed by simultaneously irradiating the sample with far infrared and band- edge light. Under action of applied external magnetic fields, the positive response from compensating impurity B changes to negative response. The posibility of these phenomena being the result of temperature effect was excluded, which revealed the deficiency of Darken model and supported the model of rapid recombination of minority carriers for PTIS response of compensating impurity in elemental semiconductors.

关 键 词：高纯硅 光热电离光谱 元素半导体中的杂质和缺陷能级 少数载流子快速复合 

分 类 号：O472[理学—半导体物理]