NH3气氛处理制备p型ZnO薄膜及性能表征  

Preparation and characteristics of p-type ZnO by treated gaseous ammonia annealing

作　　者：唐立丹[1] 张跃[1,2] 

机构地区：[1]北京科技大学材料物理与化学系,北京100083 [2]北京科技大学新金属材料国家重点实验室,北京100083

出　　处：《物理学报》2008年第2期1145-1149,共5页Acta Physica Sinica

基　　金：国际科技合作计划项目(批准号:2006DFB51000);国家高技术研究发展计划(863)(批准号:2006AAD032351);国家自然科学基金国家合作与交流项目(批准号:50620120439)资助的课题.~~

摘　　要：采用NH3气氛处理直流/射频共溅射方法制得的ZnO:Al薄膜,从而获得Al+N共掺p型ZnO薄膜.XRD,场发射扫描电子显微镜测试及Hall效应测试发现,处理温度对ZnO薄膜的结构和电学性能具有较大的影响,其中处理温度为700℃时,薄膜具有较好的c轴择优取向,并且薄膜表面平整,结构紧密,晶粒大小均匀,无明显空洞和裂缝,具有良好的表面质量,晶粒尺寸约为40—60nm,薄膜的导电类型由n型转变为p型.The p-type ZnO： Al films deposited by RF/DC magnetron sputtering at room temperature were treated by gaseous ammonia annealing. The characteristics were examined by XRD, FESEM and Hall measurement. The results showed that the films crystallized in the wurzite phase with a preferential orientation along the c-axis and the surfaces are smooth and dense without visible pores and defects over the film, and the grain size was about 40-60 nm at the annealing temperature of 700℃. The Hall measurement showed p-type conduction with the high carrier concentration of 8.346×10^18 cm^-3 and low resistivity of 25.014Ω·cm when the annealing temperature was 700℃.

关 键 词：P型ZNO Al+N共掺杂 直流/射频共溅射 

分 类 号：O472[理学—半导体物理] O484[理学—物理]