On-Resistance Degradations Under Different Stress Conditions in High Voltage pLEDMOS Transistors and an Improved Method  

高压pLEDMOS器件在不同应力条件下导通电阻的衰退及改进方法(英文)

作　　者：孙伟锋[1] 吴虹[1] 时龙兴[1] 易扬波[1] 李海松[1] 

机构地区：[1]东南大学国家ASIC系统工程技术研究中心,南京210096

出　　处：《Journal of Semiconductors》2008年第2期214-218,共5页半导体学报（英文版）

基　　金：国家高技术研究发展计划资助项目(批准号:2004AA1Z1060)~~

摘　　要：The on-resistance degradations of the p-type lateral extended drain MOS transistor （pLEDMOS） with thick gate oxide under different hot carrier stress conditions are different, which has been experimentally investigated. This difference results from the interface trap generation and the hot electron injection, and trapping into the thick gate oxide and field oxide of the pLEDMOS transistor. An improved method to reduce the on-resistance degradations is also presented, which uses the field oxide as the gate oxide instead of the thick gate oxide. The effects are analyzed with a MEDICI simulator.实验测试结果揭示高压pLEDMOS器件在不同的应力条件下,导通电阻的衰退结果不同,半导体器件专业软件MEDICI模拟结果表明Si/Si O2表面的陷阱产生以及热电子的注入和俘获导致了高压pLEDMOS器件在不同的应力条件下产生不同的导通电阻衰退.文中同时提出了一种改进方法:用场氧代替厚栅氧作为高压pLEDMOS器件的栅氧,MEDICI模拟结果显示该方法可以明显降低/减缓高压pLEDMOS导通电阻的衰退.

关 键 词：pLEDMOS on-resistance degradation hot electron injection and trapping thick gate oxide 

分 类 号：TN386[电子电信—物理电子学]