UHV/CVD法生长硅基低位错密度厚锗外延层  

Growth of Thick Ge Epitaxial Layers with Low Dislocation Density on Silicon Substrate by UHV/CVD

作　　者：周志文[1] 蔡志猛[1] 张永[1] 蔡坤煌[1] 周笔[1] 林桂江[1] 汪建元[1] 李成[1] 赖虹凯[1] 陈松岩[1] 余金中[2] 王启明[2] 

机构地区：[1]厦门大学物理系半导体光子学研究中心,厦门361005 [2]中国科学院半导体研究所集成光电子学国家重点实验室,北京100083

出　　处：《Journal of Semiconductors》2008年第2期315-318,共4页半导体学报（英文版）

基　　金：国家自然科学基金(批准号:60676027;50672079;60336010);福建省重点科技项目(批准号:2006H0036);教育部回国留学人员启动基金资助项目~~

摘　　要：采用超高真空化学气相淀积系统,以高纯Si2H6和GeH4作为生长气源,用低温缓冲层技术在Si(001)衬底上成功生长出厚的纯Ge外延层.对Si衬底上外延的纯Ge层用反射式高能电子衍射仪、原子力显微镜、X射线双晶衍射曲线和Ra-man谱进行了表征.结果表明在Si基上生长的约550nm厚的Ge外延层,表面粗糙度小于1nm,XRD双晶衍射曲线和Ra-man谱Ge-Ge模半高宽分别为530″和5.5cm-1,具有良好的结晶质量.位错腐蚀结果显示线位错密度小于5×105cm-2.可用于制备Si基长波长集成光电探测器和Si基高速电子器件.Thick Ge epitaxial layers are grown on Si（001） substrates with low temperature buffer layers with ultra-high vacuum chemical vapor deposition systems using Si21-16 and GeH4 as precursors. The deposition process of.the Ge layer on Si is investigated in real time by reflection high-energy electron diffraction, and the quality of the Ge layer was evaluated by atomic force microscopy, double crystal X-ray diffraction （XRD）, and Raman measurement. The root-mean-square surface roughness of the Ge epilayer with a thickness of 550nm is less than 1nm and the full-width-at-half maximum of the Ge peak of the XRD profile and the Ge-Ge mode of the Raman spectra are about 530＂ and 5.5cm^-1, respectively. These measurements indicate that the Ge epitaxial layer is of good qual- ity. The etch pit density related to threading dislocations is less than 5 × 10s cm^-2 . This is a promising material for Si-based long wavelength photodetectors and electronic devices

关 键 词：锗硅异质外延 弛豫缓冲层 锗 

分 类 号：TN405[电子电信—微电子学与固体电子学]