双段式加热锗单晶生长设备的结构设计  

Design of A Two-stage Heating Single Crystal Germanium Growth Furnace

作　　者：原洛渭[1] 高利强[1] 

机构地区：[1]西安理工大学工厂,陕西西安710077

出　　处：《电子工业专用设备》2008年第2期11-14,共4页Equipment for Electronic Products Manufacturing

摘　　要：锗单晶和锗单晶片是重要的半导体材料,锗单晶的生长广泛采用的是CZ(直拉)法,其主要结构包括底座及立柱装置、下传动装置、主炉室、插板阀、副炉室、籽晶提升旋转机构、液压驱动装置、真空系统、充气系统及水冷系统等。Germanium single crystal and monocrystalline germanium slices are important semiconductor materials. CZ method has been applied widely in the growth of the germanium single crystal. The main equipment includes base, main column, crucible pull part, main furnace, flashboard valve, auxiliary furnace, seed pulling machine ＆ circumgyrating equipment, hydraulic pressure drive device, vacuum sys- tem, gas filling system and water-cooling system.

关 键 词：锗单晶 双段式加热 单晶炉 

分 类 号：TN806.9[电子电信—信息与通信工程]