PECVD淀积SiO_2的应用  

Applied research on SiO_2 deposited by PECVD

作　　者：吕文龙[1] 罗仲梓[1] 何熙[2] 张春权[1] 

机构地区：[1]厦门大学萨本栋微机电研究中心,厦门361005 [2]天津大学材料学院,天津300072

出　　处：《功能材料与器件学报》2008年第1期33-37,共5页Journal of Functional Materials and Devices

摘　　要：研究了PECVD腔内压力、淀积温度和淀积时间等工艺条件对SiO2薄膜的结构、淀积速率和抗腐蚀性等性能的影响。结果表明,利用剥离工艺,并采用AZ5214E光刻胶作为剥离掩模成功制作了约2μm厚的包裹在金属铝柱周围的SiO2隔热掩模。The silicon oxide thin films are deposited on Silicon substrate by PECVD. The influence of the process parameters such as temperature, reactant and time on the quality, deposited rate and etchant - resistant characteristics of the silicon oxide thin films are discussed. The experimental result indicates that 2μm- thick silicon oxide adiabatic films can be prepared successfully by using lift - off technology with AZ5214E photoresist lift- off mask ,which is wrapped around the aluminum pillar.

关 键 词：PECVD SIO2 AZ5214E 剥离 

分 类 号：TN304[电子电信—物理电子学]