PECVDSiO_2/Si_3N_4双层膜驻极体性能  

PECVD prepared SiO_2/Si_3N_4 double layers electrets

作　　者：陈治宇[1] 吕知秋[1] 张锦文[1] 金玉丰[1] 李婷[1] 田大宇[1] 王颖[1] 

机构地区：[1]北京大学微电子研究院微米/纳米加工技术国家重点实验室,北京100871

出　　处：《功能材料与器件学报》2008年第1期125-128,共4页Journal of Functional Materials and Devices

基　　金：国家自然科学基金资助项目(No.60676042)

摘　　要：本文研究了在带有Cr/Au电极的玻璃衬底上利用PECVD制备的SiO2/Si3N4双层膜驻极体性能。针对这种驻极体提出了一个简单的工艺流程暴露出一部分金属电极,并在电晕注极过程中将底电极引出接地。通过实验改变电晕注极过程中的注极时间、温度等因素,希望得到对PECVD制备的SiO2/Si3N4双层膜驻极体性能的优化。本文证实了PECVD双层膜具备良好的驻极体性能,有望广泛应用于微器件中。This paper reports SiO2/Si3N4 double layer electrets both prepared by PECVD on glass substrates with Cr/Au lower electrode. A process was developed to expose part of lower metal electrode, which is connected to the ground during corona charge process. Different charging temperatures, time and other factors were investigated for improving performance of PECVD prepared SiO2/Si3N4 double layers electrets. This paper has proved high performance of PECVD prepared SiO2/Si3N4 double layers electrets, which can thus be expected a wide application in micro devices.

关 键 词：驻极体 SiO2/Si3N4双层膜 PECVD 

分 类 号：TB324[一般工业技术—材料科学与工程]