气体湍流对泡生法生长蓝宝石单晶温场的影响  

Influence of Gas Turbulence on Thermal Field during Growth of Sapphire Crystal Using Kyropoulos Method

作　　者：李金权[1] 苏小平[1] 那木吉拉图[1] 黎建明[1] 张峰翊[1] 李楠[1] 杨海[1] 

机构地区：[1]北京有色金属研究总院,北京国晶辉红外光学材料有限公司,北京100088

出　　处：《人工晶体学报》2008年第1期236-239,247,共5页Journal of Synthetic Crystals

摘　　要：本文采用专业晶体生长模拟软件CrysVUn对泡生法生长大尺寸蓝宝石单晶进行了计算机模拟。分析了气体压力对泡生法生长蓝宝石单晶的温场、气体速度场的影响。结果发现在气压P≥105Pa时,特别是在引晶初期,容易出现籽晶根部熔化,这在实验中得到了很好的验证,并提出了三种解决方案。The professional modeling software package CrysVUn was employed to study the process of a large sapphire single crystal growth using Kyropoulos method. The influence of gas pressure on thermal field, solid-liquid interface shape, gas velocity field and vonMises Stress have been general studied for the first time. It is found that the root of the seed melted when gas pressure equals to one atmosphere or more than one atmosphere, especially during the seeding period, this result is consistent with the experimental observation, and this paper advances three ways to solve this problem. The temperature gradient and stress decreases significantly as the gas pressure increases. The convexity of the solid-liquid interface slightly increases when the gas pressure increases.

关 键 词：气体对流 温场 蓝宝石单晶 数值模拟 

分 类 号：O78[理学—晶体学]