SOI MOSFET抗辐射加固的常用方法与新结构  

Common Technologies and Novel SOI MOSFET Device Structures for Minimizing Total Dose Radiation Damage

作　　者：何玉娟[1] 刘洁[1] 恩云飞[1] 罗宏伟[1] 师谦[1] 

机构地区：[1]电子元器件可靠性物理及其应用技术国家级重点实验室,广州510610

出　　处：《半导体技术》2008年第3期223-226,共4页Semiconductor Technology

基　　金：国家重点实验室基金项目(9140C030604070C0304);国家基础科研项目(A0626270)

摘　　要：SOI CMOS技术存在许多优势,但由于存在厚的埋氧层,其总剂量效应反而比体Si器件更差,因此需进行总剂量抗辐射加固设计。对几种SOI MOSFET的栅氧、埋氧和场氧总剂量抗辐射加固的方法进行了对比较分析,指出了各自的优劣势,给出了研究方向。并对FLEXFET和G4-FET三维SOI器件抗辐射加固新结构进行了阐述,分析了其优越性。SOI CMOS technology has many advantages, however, the thick buried oxide in SOI substrates introduces worse total ionizing dose （TID） damages than it in body Si transistors. So TID hardened designs should be done in SOI transistors and circuits. Analysis and comparison are made on some technologies for SOI MOSFET device structures, the advantages and disadvantages are discussed, and the research trend is pointed out. Expound of FLEXFET and G^4-FET new structures for minimizing total dose radiation damage are introduced, and the superiority is analyzed.

关 键 词：SOI 总剂量效应 FLEXFET G^4-FET 

分 类 号：TN386[电子电信—物理电子学]