不同氧含量下LCMO/NSTO异质结I-V特性分析  

I-V Characteristics of LCMO/NSTO Heterojunction with Different Oxygen Contents

作　　者：牟艳秋[1] 

机构地区：[1]东北农业大学理学院,黑龙江哈尔滨150030

出　　处：《交通科技与经济》2008年第2期68-69,72,共3页Technology & Economy in Areas of Communications

摘　　要：研究La0.67Ca0.33MnO3(LCMO)/Nb-0.1wt%-dopedSrTiO3(NSTO)PN结的制备及其I-V特性,分析不同氧含量对I-V特性的影响。随着样品制备氧压的变化,LCMO薄膜电阻率和金属-绝缘体转变温度TP都有所变化。同时得出PN结的阈值电压Vd和温度的关系,并分析其变化的原因。In this paper, we fabricated the La0.67 Ca0.33 MnO3 （LCMO）/Nb - 0. 1 wt% - doped SrTiO3 （NSTO） heterojunctions under different oxygen atmosphere and investigated the I-V characteristics of these junctions. With varying the oxygen pressure of the sample fabrication, the resistivity of LCMO film and the metal-insulator transition temperature Tp are changed. We derive the relation between the rising voltage （Vd） and the temperature , and analyze the cause of the change.

关 键 词：PN结 氧压 阈值电压 载流子浓度 

分 类 号：O472[理学—半导体物理]