纳米硅/晶体硅异质结电池的暗I-V特性和输运机制  

Dark I-V Characteristics and Carrier Transport Mechanism in Nano-Crystalline Silicon Thin Film/Crystalline Silicon Hetero-Junction Solar Cells

作　　者：刘丰珍[1] 崔介东[1] 张群芳[1] 朱美芳[1] 周玉琴[1] 

机构地区：[1]中国科学院研究生院物理科学学院,北京100049

出　　处：《Journal of Semiconductors》2008年第3期549-553,共5页半导体学报（英文版）

基　　金：国家重点基础研究发展规划(批准号:G2000028208;2006CB202601);国家高技术研究发展计划(批准号:2006AA05Z408)资助项目~~

摘　　要：采用HWCVD技术在p型CZ晶体硅衬底上制备了纳米硅/晶体硅异质结太阳电池,测量了晶体硅表面在不同氢处理时间下的异质结的暗I-V特性和相应的电池性能参数.室温下的正向暗I-V特性采用双二极管模型来拟合,可将0～1V的电压范围区分为4个区域:旁路电阻(0～0.15V)、非理想二极管2(0.15～0.3V)、理想二极管1(0.3～0.5V)和串联电阻(>0.5V).拟合结果表明,适当的氢处理时间(～30s)可有效降低非理想二极管的理想因子n2,即降低界面复合电流,表明具有好的界面特性.对于282～335K的暗I-V温度特性的研究表明,在0.15～0.3V的低电压范围,暗电流主要由耗尽区的复合电流提供,0.3～0.5V电压范围,对输运起主要作用的是隧穿过程,该过程可用通过界面陷阱能级的隧穿模型来解释.N nc-Si/c-Si heterojunction solar cells were prepared with the hot-wire chemical vapor deposition technique. The dark I-V characteristics of the cells with different atomic hydrogen treatments on the c-Si surface were measured. At room temperature,the I- V curves were fitted by a two-diode model in which four different voltage regions were recognized：the shunt resistance （ V〈0.15）, nonideal diode （0. 15〈V〈0.3V） ,ideal diode （0.3〈V〈0.5V） ,and series resistance （ V〉0. 5V） regions. The modeled results show that the ideality factor of the nonideal diode （n2） is decreased by a suitable atomic hydrogen treatment of 30s,indicating a lower recombination current and a better interface property. The dark 1-V characteristics in the temperature range of 282～335K indicate that in the lower voltage range of 0.15～0.3V, the dark current mainly originates from the recombination current in the depletion region. In the 0.3～0. 5V range, the tunneling process dominates in the transport mechanism,which can be described by an interracial tunneling process through the interface states.

关 键 词：纳米硅薄膜 异质结电池 暗电流.电压特性 输运机制 

分 类 号：O475[理学—半导体物理]