AlGaN肖特基紫外探测器的γ辐照效应  

Effects of Gamma Irradiation on AlGaN Schottky UV Detector

作　　者：白云[1] 李雪[1] 张燕[1] 龚海梅[1] 

机构地区：[1]中国科学院上海技术物理研究所传感器技术国家重点实验室,上海200083

出　　处：《半导体光电》2008年第1期20-22,40,共4页Semiconductor Optoelectronics

摘　　要：对AlGaN肖特基紫外探测器件用不同剂量的γ射线进行辐照,测量了器件辐照前后的电流-电压特性、电容-频率曲线和响应光谱曲线的变化。实验发现γ辐照对器件的暗电流没有产生大的影响,但大剂量的辐照有使肖特基势垒高度降低的趋势。同时辐照还引起了器件的电容的频率特性的增强,并且降低了器件的响应率。这些现象可能是γ辐照在AlGaN材料中诱生了新的缺陷能级造成的。Applying different doses γ irradiation on AlGaN UV detector, its current-voltage characteristics, capacitance-frequency curve and response spectrum were measured before and after irradiation to analyze the irradiation effect. With higher dose of irradiation, the Schottky barrier height trends to be lower while the dark current is not influenced apparently. The frequency characteristic of the capacitance is enhanced while its responsibility is decreased after irradiation. These results show that the γ irradiation might induce new defects energy level in the AlGaN detector.

关 键 词：Γ辐照 ALGAN 肖特基势垒 

分 类 号：TN23[电子电信—物理电子学]