脊形InGaAs量子阱激光器的高频响应研究  

High Speed Modulation Response of InGaAs Quantum Well Ridge Waveguide Laser

作　　者：孙彦[1] 彭红玲[2] 任正伟[2] 贺振宏[2] 

机构地区：[1]大同大学,山西大同037009 [2]中国科学院半导体研究所,北京100083

出　　处：《半导体光电》2008年第1期52-55,共4页Semiconductor Optoelectronics

摘　　要：对MBE生长的InGaAs量子阱(QW)激光器的频率特性进行了研究。研制了InGaAs QW脊波导结构的激光器,通过控制脊的腐蚀深度,得到阈值电流密度为300 A/cm2的激光器,且激光器在常温下工作稳定,输出功率较大,其阈值电流附近3 dB带宽超过2 GHz。比较了不同电极面积时器件的调制响应,结果表明小面积电极可以有效提高器件的调制带宽。The frequency characteristics of InGaAs quantum well ridge waveguide laser grown by MBE were investigated. Low threshold current density of 300 A/cm^2, high output power and stable operation at room temperature were realized through controlling the depth of the ridge waveguide. The modulation responses of the devices with different area sizes of contact layer were compared. The device with narrow metal contact exhibits higher modulation bandwidth. A 3 dB bandwidth of 2 GHz is realized just above the threshold current.

关 键 词：量子阱激光器 脊波导 微分增益 3 dB带宽 

分 类 号：TN242[电子电信—物理电子学]