InGaAs/InP光伏探测器阵列钝化工艺及均匀性研究  

Study on Passivation and Uniformity of InGaAs/InP Photovoltaic Detevtor Arrays

作　　者：田招兵[1] 张永刚[1] 顾溢[1] 祝向荣[1] 郑燕兰[1] 

机构地区：[1]中国科学院上海微系统与信息技术研究所信息功能材料国家重点实验室,上海200050

出　　处：《半导体光电》2008年第1期60-63,共4页Semiconductor Optoelectronics

摘　　要：通过对气态源分子束外延结合常规器件工艺研制的晶格匹配InGaAs/InP光伏型探测器阵列光响应和暗电流特性的表征和比较,研究了聚酰亚胺和氮化硅两种钝化工艺对阵列器件性能和均匀性的影响,并对两种不同钝化膜阵列器件后续封装的可靠性进行了比较和分析。实验结果表明,气态源分子束外延材料具有良好的均匀性;氮化硅钝化器件总体性能上优于聚酰亚胺钝化器件。引线封装实验显示,SiN钝化膜有较好的抗冲击和热稳定性,具有更好的工艺相容性。The photo response and dark current of lattice-matched InGaAs/InP photovoltaic detector arrays grown by gas source molecular beam epitaxy（GSMBE） were characterized. The effects of polyimide and silicon nitride passivation techniques on the uniformity and reliability of the array chips were investigated. On wafer test results show that the GSMBE grown materials have good quality and uniformity; the silicon nitride passivation has better effects on the compositive performance. Further investigations on the subsequent wire bonding and packaging processes show that silicon nitride passivation has better resistibility to thermal shock and is more consistent to the processing.

关 键 词：INGAAS 光伏探测器 焦平面阵列 钝化 气态源分子束外延 

分 类 号：TN364[电子电信—物理电子学]