直流反应磁控溅射法制备WO_3薄膜及其氢敏特性研究  

Study on WO_3 thin film prepared by DC reactive magnetron sputtering and its hydrogen gas sensing features

作　　者：胡明[1] 冯有才[1] 尹英哲[1] 陈鹏[1] 

机构地区：[1]天津大学电子信息工程学院,天津300072

出　　处：《传感器与微系统》2008年第3期46-48,共3页Transducer and Microsystem Technologies

摘　　要：采用直流反应磁控溅射法,在未抛光的A l2O3基片上制备WO3薄膜,在干燥空气中经过热处理;利用SEM观察薄膜表面形貌;通过XRD测量,对薄膜的晶体结构进行分析;薄膜氢敏特性测试采用静态配气法。经过400℃热处理,当工作温度在270℃时,对体积分数为3×10-4氢气的灵敏度达到了77,稳定性较高,选择性好,响应时间很快,在15 s以内,是一种较理想的氢敏材料。WO3 thin film gas sensors are prepared by DC reactive magnetron sputtering on unpolished alumina substrate and annealed in the dry air. The surface morphology of the film is analyzed by SEM and the crystalline phase of the film is scaled against XRD. In order to measure H2 gas sensitivity of WO3 thin film, a sealed test box is used. A sample is installed in the test box and the test gas is precisely pumped by an injector. Under 400 ℃ of annealing temperature and 270 ℃ of operating temperature, the hydrogen sensitivity of the thin film with a volume fraction of 3 ×10^-4 hydrogen can reach maximum at 77. The response time is quite short and within 15 s. Therefore,with above-mentioned features, WO3 film can be treated as an ideal hydrogen gas sensing material.

关 键 词：磁控溅射 WO3 氢传感器 灵敏度 

分 类 号：TP212[自动化与计算机技术—检测技术与自动化装置]