双极晶体管的高温变剂量率辐照效应  

Effect of Switching Dose Rate on Bipolar Junction Transistors at High Temperature

作　　者：王先明[1] 刘楚湘[1] 艾尔肯.斯迪克 

机构地区：[1]新疆师范大学数理信息学院,新疆乌鲁木齐830054

出　　处：《核电子学与探测技术》2007年第6期1139-1141,1145,共4页Nuclear Electronics & Detection Technology

基　　金：新疆师范大学科学研究基金项目资助(NSFxjnu200403)

摘　　要：研究了双极晶体管的变剂量率电离辐射损伤,发现从高到低的变剂量率辐照更有利于低剂量率辐射损伤增强效应的加速评估。Switching dose-rate irradiation of the Bipolar Junction Transistors at high temperature are investigated. The result showes that the switching doserate from high to low irradiation is benefit to evaluation of the Enhanced Low Dose Rate Sensitivity. Possible mechanism for this effect is discussed.

关 键 词：双极晶体管 高温变剂量率辐照 剂量率效应 ELDRS 

分 类 号：TN324.3[电子电信—物理电子学]