InGaAs/GaAs量子链的光学特性研究  

Optical properties of InGaAs/GaAs quantum chains

作　　者：王宝瑞[1] 孙征[1] 徐仲英[1] 孙宝权[1] 姬扬[1] Z. M. Wang G.J. Salamo 

机构地区：[1]中科院半导体研究所,超品格国家重点实验室,北京100083 [2]Department of Physics, University of Arkansas

出　　处：《物理学报》2008年第3期1908-1912,共5页Acta Physica Sinica

基　　金：国家自然科学基金(批准号10334040);国家重点基础研究发展计划(973)项目(批准号G001CB3095)资助的课题~~

摘　　要：研究了InGaAs/GaAs量子链的稳态和瞬态光谱特性,特别是载流子的动力学过程.实验发现荧光寿命有很强的探测能量依赖关系,荧光寿命随发光能量的增加而减小;实验还发现,当激发功率较小时,荧光寿命随激发功率增大而增大,当激发功率足够大时,荧光寿命趋于饱和.这些结果清楚地表明,在量子链结构中,参与发光的载流子之间存在明显的耦合和输运现象,进一步分析表明,这种输运主要是由于载流子沿量子链方向的耦合造成的.发光的偏振特性研究进一步证实了载流子沿量子链方向输运过程.We have investigated the steady-state and transient optical properties of InGaAs/GaAs quantum chains and found that the photoluminescence （PL） decay time exhibits a strong photon energy dependence. It increases with the decrease of the emission energy. It is also found that the PL decay time increases with the excitation power. When the excitation power is large enough the PL decay time tends to be saturated. All these experimental results show that there is a strong carrier coupling along the chain direction in the quantum dot chain structure. The polarization PL measurements further confirm the carrier transfer process along the chain direction.

关 键 词：INGAAS/GAAS 量子点 量子链 光学特性 载流子 纳米结构 

分 类 号：O471.1[理学—半导体物理] O472.3[理学—物理]