铜离子注入镧掺杂BaTiO_3半导体陶瓷的阻抗谱研究  

Investigation of Cu- ion Implantation into La-doped Semiconducting Barium Titanate by Impedance Measurement

作　　者：王国梅[1] 杜慧玲[1] 雷家珩[1] 勾焕林[2] 

机构地区：[1]武汉工业大学材料学院 [2]清华大学新型陶瓷与精细工艺国家重点实验室

出　　处：《现代技术陶瓷》1997年第2期19-25,共7页Advanced Ceramics

摘　　要：本文应用宽频率范围的阻抗谱测量,分析了铜离子注入(110kev,6×10^(15)和1×10^(17)ions/cm^2)镧掺杂BaTiO_3半导瓷在不同温度时的晶粒电阻,晶界电阻和电极与材料界面电阻。提出了相应的等效电路。同时,讨论了离子注入剂量的影响,表明铜离子注入剂量较低时,可以提高材料的PTCR效应。此外,也应用阻温特性测量分析了铜离子注入样品的PTCR效应。La-doped semiconducting barium titanate was implanted with 110 Kev Cu-ions to doses of 6. 0×1015 and 1.0×1017 ions/cm2. Impedance measurement over a wide range of frequency was used to analyze the intragrain, inter-grain and the electrode interface resistances of the ceramics at different temperatures from 25℃ to 180℃. An appropriate equivalent circuit was proposed. The effect of dose on the implanted specimens was studied by this measurement. The results show that relatively low dose must be used to increase the magnitude of the PTCR effect of the specimen. Additionally. the resistance vs temperature measurement was also used to investigate the PTCR effect of the implanted specimens.

关 键 词：离子注入 阻抗谱 陶瓷半导体 钛酸钡陶瓷 铜 

分 类 号：TN304.82[电子电信—物理电子学]