机械振动对直拉法Si单晶生长的影响  

Influence of Mechanical Vibration on Czochralski Si Crystal Growth

作　　者：李巨晓 庄力 

机构地区：[1]杭州海纳半导体有限公司,杭州310027

出　　处：《半导体技术》2008年第4期304-307,共4页Semiconductor Technology

摘　　要：机械振动是直拉法单晶生长过程中不可避免的因素,影响单晶的正常生长。从生长机理方面看,传递到熔体的振动会引起熔体内对流的变化,对固-液界面的稳定性造成干扰,从而影响单晶的品质和无位错生长;从操作控制方面而言,熔体的振动会使引晶变得困难,也不利于等晶生长过程中的自动控制,造成了生产周期的相对延长,从而增加了生产成本。分析了实际生产过程中振动的来源及其对单晶生长的影响,并探讨了一些抑制振动的方法来消除这一影响。Mechanical vibration is an inevitable factor in czochralski Si crystal growth. From the growth mechanism aspect, vibration which transfers to melt will alter the convection and disturb the stability of growth interface, thus it affects the non-dislocation growth and deteriorates the quality of ingot. From the control aspect, melt vibration will make The origination of vibration and seeding process difficult and make against automatic control in body growth. its influence on silicon crystal growth was analysed, and some methods to restrain vibration were discussed and its influence was eliminated.

关 键 词：直拉法 硅单晶 振动 

分 类 号：TN305.1[电子电信—物理电子学]