微传感器制备中多孔硅牺牲层技术的研究  

Study on Porous Silicon as a Sacrificial Layer in Microsensor

作　　者：娄利飞[1] 李跃进[1] 杨银堂[1] 汪家友[1] 

机构地区：[1]西安电子科技大学微电子所,宽禁带半导体材料与器件教育部重点试验室,陕西西安710071

出　　处：《压电与声光》2008年第2期187-189,共3页Piezoelectrics & Acoustooptics

基　　金：国家自然科学基金资助项目(90207022);武器装备预研基金资助项目(51411040105DZ0141)

摘　　要：采用双槽电化学腐蚀法成功的制备了多孔硅,从多孔硅的SEM照片中发现,孔径尺寸小,均匀性好,腐蚀深度大(超过100μm),在极稀的弱碱溶液中就可以得到去除,然后对双槽化学腐蚀法中腐蚀时间及电流对腐蚀速率的影响进行了研究,最后进一步探讨了多孔硅外貌与硅衬底晶向之间的关系。The porous silicon was successfully prepared by double-cell electrochemical etching. The SEM photos of porous silicon shows that the porous silicon obtained by this method has the smallest hole diameter, good uniformity, large depth （exceeding 100μm）, and removal porous silicon using the mighty watery KOH solution. The above porous silicon much more accords with the appliance require of sacrificial layer in MEMS. Finally, the etching time and current of double-cell electrochemical etching which affect the etching speed of the porous silicon were studied.

关 键 词：多孔硅 牺牲层 MEMS 双槽电化学腐蚀法 

分 类 号：TN304.05[电子电信—物理电子学]