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作 者:李世岚[1] 包生祥[1] 马丽丽[1] 彭晶[1] 杜支波[1] 周勋[1]
机构地区:[1]电子科技大学电子薄膜与集成器件国家重点实验室,四川成都610054
出 处:《压电与声光》2008年第2期246-247,共2页Piezoelectrics & Acoustooptics
基 金:国防科工委共性基金资助项目(G030103010404GK0002)
摘 要:压电石英基片在加工过程中会带来表面/亚表面损伤,这种损伤会直接影响电子器件的性能、稳定性及寿命。该文采用扫描电镜(SEM)观测与X-射线双晶回摆曲线检测化学腐蚀逐层剥离深度相结合的方法,定量分析了36°AT切压电石英基片亚表面损伤层厚度,并探讨了亚表面损伤层的形成原因及对器件性能的影响。Piezoelectricity quartz is the most commonly used substrate in single device. The machining process will bring surface/subsurface damage which will directly influences the performance, stability and life of electronic devices. In this paper, the surface damage layer in the quartz crystal wafer of 36°AT-Cut induced by Chemical-mechanical polishing was analyzed by means of scanning electron microscopy and X-ray rocking curve measurements after the wafer was chemically etched. The reason of formed damage layer and the influence of device performances was discussed in detail.
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