溅射功率对氮化铜薄膜结构及其性能的影响  

Effect of sputtering power on structure and properties of copper nitride thin films

作　　者：刘敏[1] 崔增丽[2] 黄致新[2] 郭继花[2] 张峰[2] 

机构地区：[1]华中师范大学出版社,武汉430079 [2]华中师范大学物理科学与技术学院,武汉430079

出　　处：《华中师范大学学报（自然科学版）》2008年第1期54-57,共4页Journal of Central China Normal University：Natural Sciences

基　　金：湖北省自然科学基金资助项目(2005ABA041)

摘　　要：采用反应射频磁控溅射方法,在氮气和氩气混合气氛下并在玻璃基底上成功制备出了纳米氮化铜(Cu3N)薄膜,并研究了溅射功率对Cu3N薄膜的择优取向、平均晶粒尺寸、电阻率、光学能隙的影响.XRD显示溅射功率对氮化铜薄膜的择优取向影响很大,在低功率时薄膜择优[111]方向,在较高功率时薄膜择优[100]方向.紫外可见光谱、四探针电阻仪等测试表明:当溅射功率从80 W逐渐增加到120 W时,薄膜的光学能隙从1.85 eV减小到1.41 eV,电阻率从1.45×102Ωcm增加到2.99×103Ωcm.Nano-Copper nitride （Cu3N） thin films were successfully deposited on glass substrates at normal temperature by reactive radio frequency magnetron sputtering under different sputtering powers and in a mixture gas of nitride and argon. The effect of sputtering power on the preferential crystalline orientation, the mean crystalline grains size, the electrical resistivity, and the optical energy gap of as-deposited films were investigated. X-ray diffraction shows that the preferential orientation is greatly affected by the sputtering power, the film growth prefers the [111] direction under the low sputtering power and the [100] direction under the high sputtering power. The electrical resistivity of the films, determined by the four-point probe method increased from 1.45 X 10^2 Ωcm to 2.99 X l0^3 Ωcm and the optical band gap, determined by UV-visible spectrometry decreased from 1.85 eV to 1.41 eV with increasing sputtering power from 80 W to 120 W.

关 键 词：氮化铜薄膜 溅射功率 结构 性能 

分 类 号：O484[理学—固体物理]