宽反射角DBR红光发光二极管  

Wide reflected angle DBR red light LED

作　　者：韩军[1] 李建军[1] 邓军[1] 邢艳辉[1] 于晓东[1] 林委之[1] 刘莹[1] 沈光地[1] 

机构地区：[1]北京市光电子技术实验室,北京工业大学,北京100077

出　　处：《光电子．激光》2008年第4期456-458,共3页Journal of Optoelectronics·Laser

基　　金：北京市科委高效高亮度单芯片半导体照明器件的研发与产业化资助项目(D0404003040221)

摘　　要：对用于提高AlGaInP红光发光二极管出光效率的传统DBR进行了分析,用MOCVD生长了包含对垂直入射光反射的DBR和对斜入射光反射的DBR复合在一起的红光LED,在20mA注入电流下,LED的峰值波长为630nm,轴向光强达到137mcd,输出光功率为2.32mW。与常规的LED相比,光强和输出光功率有很大的提高。We analyzed the conventional DBR which was used to increase the light extraction efficiency in AIGalnP red light LED. The coupled DBR LED with one DBR to reflect normal incidence light and one DBR to reflect inclined incidence light was grown by MOCVD. At 20 mA Dc injection current,the LED peak wavelength was 630 nm,the light intensity of on axis was 137 mcd,and the output light power was 2. 32 mW. The light intensity and output light power were improved than conventional LED.

关 键 词：红光发光二极管 分布布拉格反射镜 金属有机物化学气相沉积 

分 类 号：TN383[电子电信—物理电子学]