Ga-In-As-Sb合金半导体MOCVD外延工艺设计的热力学分析  

Thermodynamic Analysis of MOCVD Epitaxy Process Design for Ga In As Sb Alloy Semiconductor

作　　者：张维敬[1] 杜振民[1] 李长荣[1] 刘国权[1] 

机构地区：[1]北京科技大学材料科学与工程学院

出　　处：《金属热处理学报》1997年第3期89-94,共6页

基　　金：国家863高技术研究发展计划资助

摘　　要：用亚点阵模型和络合物模型描述ⅢⅤ族半导体ＭＯＣＶＤ生长过程中涉及的凝聚相及气相的热力学性质，以系统最小自由焓为相平衡判据；用ＣＡＬＰＨＡＤ技术，计算了包括复杂化学反应的多元复相体系的相图和有关相平衡信息；对多元化合物的成分空间及相应的点阵常数、能带间隙和自由焓等性质在该空间的表达提出了规范性模式。结合编建的ＣＨＡｌＧａＩｎＰＡｓＳｂ体系热力学数据库，对ⅢⅤ族合金半导体ＭＯＣＶＤ、ＭＢＥ和ＬＰＥ工艺的计算机辅助设计具有重要作用。The thermodynamic properties of both the condensed and vapor phases concerned in the Ⅲ Ⅴ semiconductor MOCVD process have been described and analyzed,using both the sublattice model and the association model.Based on the minimum Gibbs free energy criterion and CALPHAD technique,the information such as phase diagrams and related phase equilibria has been calculated.A general expression for the composition spaces of multicomponent compounds,as well as lattice constants,energy bandgaps,and Gibbs free energy in such spaces has been proposed.Combined with the thermodynamic database for C H Al Ga In P As Sb system generated by the authors,the above mentioned information and technique play an important role in computer aided design of Ⅲ Ⅴ alloy semiconductor MOCVD epitaxy process,MBE and LPE processes.

关 键 词：半导体 化学气相沉积 热力学 

分 类 号：TN304.23[电子电信—物理电子学]