AlGaN／GaN场板结构高电子迁移率晶体管的场板尺寸优化分析  

Geometrical optimization of AlGaN/GaN field-plate high electron mobility transistor

作　　者：魏巍[1] 郝跃[1] 冯倩[1] 张进城[1] 张金凤[1] 

机构地区：[1]西安电子科技大学微电子学院宽禁带半导体材料与器件教育部重点实验室,西安710071

出　　处：《物理学报》2008年第4期2456-2461,共6页Acta Physica Sinica

基　　金：国家重点基础研究发展规划(批准号:2002CB311904);国家自然科学基金(批准号:60676048,F040402)资助的课题~~

摘　　要：对不同场板尺寸的AlGaN/GaN场板结构高电子迁移率晶体管进行了研究,建立简化模型分析场板长度对沟道电场分布的影响.结果表明,调整钝化层厚度和场板长度都可以调制沟道电场的分布形状,当场板长度较小时,随着长度的增大器件击穿电压随之增加,而当长度增大到一定程度后器件击穿电压不再增加.通过优化场板长度,器件击穿电压提高了64%,且实验结果与模拟结果相符.Results of investigation on AlGaN/GaN field-plate high electron mobility transistor with different field-plate （FP） geometry are presented. The effect of the field-plate length Lfp on the electric field distribution in the channel is thoroughly analyzed by establishing a simplified model. The simulation gives the following estimates： Both the FP length LFP and the thickness t of the insulator under the FP, can reshape the electric field distribution in the channel. If LFP is short, the breakdown voltage Vbr increases with LFP. When LFp increases to a certain extent, Vbr keeps invariable. After optimizing LFP in this paper, Vbr has been increased by 64% . Good agreement between experimental and simulation data is achieved.

关 键 词：ALGAN/GAN 击穿电压 场板长度 

分 类 号：TN32[电子电信—物理电子学] TN386