In0．53 Ga0．47As／In0．52Al0．48As量子阱中双子带占据的二维电子气的输运特性  

Electron transport properties of In_(0.53)Ga_(0.47)As/In_(0.52)Al_(0.48) As quantum wells with two occupied subbands

作　　者：商丽燕[1] 林铁[1] 周文政[1] 黄志明[1] 李东临[2] 高宏玲[2] 崔利杰[2] 曾一平[2] 郭少令[1] 褚君浩[1] 

机构地区：[1]中国科学院上海技术物理研究所红外物理国家重点实验室,上海200083 [2]中国科学院半导体研究所,北京100083

出　　处：《物理学报》2008年第4期2481-2485,共5页Acta Physica Sinica

基　　金：国家自然科学基金(批准号:60221502)资助的课题~~

摘　　要：研究了不同沟道厚度的In0.53Ga0.47As/In0.52Al0.48As量子阱中双子带占据的二维电子气的输运特性.在考虑了两个子带电子之间的磁致子带间散射效应后,通过分析Shubnikov-de Haas振荡一阶微分的快速傅里叶变换结果,获得了每个子带电子的浓度、输运散射时间、量子散射时间以及子带之间的散射时间.结果表明,对于所研究的样品,第一子带电子受到的小角散射更强,这与第一子带电子受到了更强的电离杂质散射有关.Magnetotransport properties of two-dimensional electron gas have been investigated for three In0.53 Ga0.47As/In0.52Al0.48Asquantum well samples having two occupied subbands with different well widths. When the intersubband scattering is considered, we have obtained the subband density, transport scattering time, quantum scattering time and intersubband scattering time, respectively, by analyzing the result of fast Fourier transform of the first derivative of Shubnikov-de Haas oscillations. It is found that the main scattering mechanism is due to small-angle scattering, such as ionized impurity scattering, for the first subband electrons.

关 键 词：二维电子气 散射时间 自洽计算 

分 类 号：TN304[电子电信—物理电子学]