一种新型全方位反射AlGaInP薄膜发光二极管  

Study of a New Pattern of Omni-Directional Reflector AlGaInP Thin-Film Light-Emitting Diodes

作　　者：高伟[1] 邹德恕[1] 李建军[1] 郭伟玲[1] 沈光地[1] 

机构地区：[1]北京工业大学,北京市光电子技术实验室,北京100022

出　　处：《Journal of Semiconductors》2008年第4期751-753,共3页半导体学报（英文版）

基　　金：北京市人才强教计划项目(批准号:05002015200504);北京市科委高效高亮度单芯片半导体照明器件的研发与产业化(批准号:D0404003040221)资助项目~~

摘　　要：提出了一种新型全方位反射AlGaInP LED结构和制作工艺.GaAs外延片与含导电孔的SiO2,Au形成全方位反射镜后,银浆键合在Si支架上,去除GaAs衬底,制作薄AuGeNi电极,粗化,生长ITO,制作厚AuGeNi电极,合金则形成ODR薄膜LED结构.300μm×300μm管芯裸装在TO-18金属管座上,在20mA的电流驱动下,测得电压为2.2V,光强达到195mcd,光功率达到3.78mW,比常规吸收衬底LED提高3.6倍.A novel AIGalnP thin-film light emitting diode （LED） with an omni directional reflector structure is proposed and the corresponding fabrication process is developed. The omni-directional reflector was realized by the combination of a GaAs epi-wafer, SiO2 with conductive micro-contacts,and Au. The LED structure and Si substrate carrier were then brought into contact using silverloaded epoxy.Then,the GaAs substrate was removed and stopped on the etching stop layer. After the etching stop layer was removed, a thin AuGeNi electrode,the roughed surface,an ITO current spreading layer,a thick AuGeNi n-electrode,a AuZnAu p-electrode, and alloy were fabricated. The wafer was cut into 300μm ×300μm chips and then packaged into TO-18 without epoxy resin. For 20mA driving current,the voltage is 2. 2V, and light intensity and light power respectively reach 195mcd and 3.78mW, which is 3.6 times higher than the absorbing-substrate LEDs.

关 键 词：铝镓铟磷 薄膜发光二极管 全方位反射镜 

分 类 号：TN31[电子电信—物理电子学]