磁控溅射与氨化法催化合成GaN纳米棒  

Catalytic synthesis of GaN nanorods by magnetron sputtering and ammoniating technique

作　　者：陈金华[1] 薛成山[1] 庄惠照[1] 秦丽霞[1] 李红[1] 杨兆柱[1] 

机构地区：[1]山东师范大学半导体研究所,山东济南250014

出　　处：《功能材料》2008年第4期557-558,562,共3页Journal of Functional Materials

基　　金：国家自然科学重大基金资助项目(90201025;90301002)

摘　　要：使用一种新奇的稀土元素作为GaN纳米棒生长的催化剂,通过氨化溅射在Si(111)衬底上的Ga2O3/Tb薄膜成功合成了大规模的GaN纳米棒。采用扫描电子显微镜,X射线衍射,透射电子显微镜,高分辨透射电子显微镜和傅立叶红外吸收光谱来检测样品的形态,结构和成分。研究结果表明,合成的样品为六方纤锌矿结构的单晶GaN纳米棒。最后讨论了GaN纳米棒的生长机理。A novel rare earth seed was used as a catalyst to grow GaN nanorods. Large-scale GaN nanorods were synthesized successfully through ammoniating Ga203/Tb films sputtered on Si（111） substrates. Scanning electron microscopy, X-ray diffraction, transmission electron microscopy, high-resolution transmission electron microscopy and Fourier transformed infrared spectroscopy were used to characterize the morphology, structure and composition of the samples. The results demonstrate that the nanorods are single-crystal GaN with hexagonal wurtzite structure. The growth mechanism of GaN nanorods is also discussed.

关 键 词：纳米棒 GAN 溅射 单晶 

分 类 号：TN304[电子电信—物理电子学]