偏置条件对NMOS器件X射线总剂量效应的影响  

Influence of Bias on X-Ray Total Dose Effect in NMOSFET's

作　　者：何玉娟[1] 恩云飞[1] 师谦[1] 罗宏伟[1] 章晓文[1] 李斌[2] 刘远[2] 

机构地区：[1]电子元器件可靠性物理及其应用技术国家级重点实验室,广州510610 [2]华南理工大学微电子研究所,广州510640

出　　处：《微电子学》2008年第2期166-169,173,共5页Microelectronics

基　　金：国家重点实验室基金资助项目(9140C030604070C0304);国家重点实验室基金资助项目(9140C030601060C0302)

摘　　要：采用10 keV X射线,对NMOSFET在不同偏置条件下进行总剂量辐射,分析了辐照前后辐射感生的氧化物陷阱电荷与界面态电荷对MOS器件阈值电压的影响以及辐射导致漏电现象。实验结果表明,对于NMOSFET,On偏置条件是最劣偏置条件,Off偏置条件是最优偏置条件。Total dose radiation tests were performed on NMOSFET＇ s using a 10 keV X-ray source at different bias voltages. Effects of radiation-induced oxide-traps and interface charges on the threshold voltage of NMOSFET＇s and radiation-induced leakage currents were analyzed. It has been demonstrated that the worst irradiation bias condition is On bias and the best irradiation bias condition is Off bias.

关 键 词：X射线 总剂量辐射效应 辐射偏置 中带电压法 

分 类 号：TN306[电子电信—物理电子学]